Two micoelectronic devices were built for this: a triode field emission device. Fig (a) shows the triode device which consisted of millions of 5micron field emitting wells. Inset (b) is the schematic of the triode device - the gate allows the brightness of the device to be changed. The diode device is similar except that it has no gate. The light observed from the diode device is shown in inset (c).
Development of a field emission backlight for an avionics display
